Streamer Mode in High Gain Gallium Arsenide Photoconductive Switches

被引：0

作者：

Shi, Wei ^{[1
]}

Zhang, Jian ^{[1
]}

Wu, Shenjiang ^{[1
]}

Chen, Suguo ^{[1
]}

Ma, Cheng ^{[1
]}

机构：

[1] Xian Univ Technol, Dept Appl Phys, Xian 710048, Peoples R China

来源：

ICPADM 2009: PROCEEDINGS OF THE 9TH INTERNATIONAL CONFERENCE ON PROPERTIES AND APPLICATIONS OF DIELECTRIC MATERIALS, VOLS 1-3 | 2009年

关键词：

photoconductive switches; Lock-on effect; streamer mode; breakdown;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A streamer mode was proposed based on the gas discharge theory and the theory of optically activated charge domain in high gain gallium arsenide (GaAs) photoconductive switches (PCSS). The paper expounded the whole physical process that from the laser started to illuminate the material to the formation of the streamer. Note the critical conditions in which the streamer form and develop, comparing to the streamer mode in gas. In application of this mode many of the characteristics like transient turn-on and the current filament were explained. Finally indicate that the optically activated charge domain is a kind of special streamer.

引用

页码：1227 / 1230

页数：4

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