Streamer Mode in High Gain Gallium Arsenide Photoconductive Switches

被引：0
|
作者：
Shi, Wei [1 ]
Zhang, Jian [1 ]
Wu, Shenjiang [1 ]
Chen, Suguo [1 ]
Ma, Cheng [1 ]
机构：
[1] Xian Univ Technol, Dept Appl Phys, Xian 710048, Peoples R China
来源：
ICPADM 2009: PROCEEDINGS OF THE 9TH INTERNATIONAL CONFERENCE ON PROPERTIES AND APPLICATIONS OF DIELECTRIC MATERIALS, VOLS 1-3 | 2009年
关键词：
photoconductive switches; Lock-on effect; streamer mode; breakdown;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A streamer mode was proposed based on the gas discharge theory and the theory of optically activated charge domain in high gain gallium arsenide (GaAs) photoconductive switches (PCSS). The paper expounded the whole physical process that from the laser started to illuminate the material to the formation of the streamer. Note the critical conditions in which the streamer form and develop, comparing to the streamer mode in gas. In application of this mode many of the characteristics like transient turn-on and the current filament were explained. Finally indicate that the optically activated charge domain is a kind of special streamer.
引用
收藏
页码：1227 / 1230
页数：4
相关论文
共 50 条
  • [1] Monopole charge domain in high-gain gallium arsenide photoconductive switches
    Shi, W
    Chen, EZ
    Zhang, XB
    Li, Q
    [J]. CHINESE PHYSICS LETTERS, 2002, 19 (08) : 1119 - 1121
  • [2] STREAMER IN HIGH GAIN GAAS PHOTOCONDUCTIVE SEMICONDUCTOR SWITCHES
    Liu, Hong
    Ruan, Chengli
    [J]. 2009 IEEE PULSED POWER CONFERENCE, VOLS 1 AND 2, 2009, : 660 - 665
  • [3] High power, longevity gallium arsenide photoconductive semiconductor switches
    Yang HongChun
    Cui HaiJuan
    Sun YunQing
    Zeng Gang
    Wu MingHe
    [J]. CHINESE SCIENCE BULLETIN, 2010, 55 (13): : 1331 - 1337
  • [4] High power, longevity gallium arsenide photoconductive semiconductor switches
    YANG HongChun
    [J]. Science Bulletin, 2010, (13) : 1331 - 1337
  • [5] High power, longevity gallium arsenide photoconductive semiconductor switches
    YANG HongChun CUI HaiJuan SUN YunQing ZENG Gang WU MingHe Institute of Applied Physics University of Electronic Science and Technology of China Chengdu China
    [J]. Chinese Science Bulletin., 2010, 55 (13) - 1337
  • [6] Simulation, modeling, and experimental studies of high-gain gallium arsenide photoconductive switches for ultra-wideband applications
    Schamiloglu, E
    Islam, NE
    Fleddermann, CB
    Shipley, B
    Joshi, RP
    Zheng, L
    [J]. ULTRA-WIDEBAND SHORT-PULSE ELECTROMAGNETICS 4, 1999, : 221 - 228
  • [7] Mechanism of current oscillations in gallium arsenide photoconductive semiconductor switches
    Tian Li-Qiang
    Shi Wei
    [J]. CHINESE PHYSICS LETTERS, 2008, 25 (07) : 2511 - 2513
  • [8] Analysis of high voltage operation of gallium arsenide photoconductive switches used in high power applications
    Islam, NE
    Schamiloglu, E
    Fleddermann, CB
    Schoenberg, JSH
    Joshi, RP
    [J]. JOURNAL OF APPLIED PHYSICS, 1999, 86 (03) : 1754 - 1758
  • [9] Ultra-wideband source using gallium arsenide photoconductive semiconductor switches
    Schoenberg, JSH
    Burger, JW
    Tyo, JS
    Abdalla, MD
    Skipper, MC
    Buchwald, WR
    [J]. IEEE TRANSACTIONS ON PLASMA SCIENCE, 1997, 25 (02) : 327 - 334
  • [10] Photovoltaic Response Characteristics of GaAs Photoconductive Switches Under High Gain Mode
    DAI Hui-ying1
    2. Department of Applied Mathematics and Physics
    [J]. Semiconductor Photonics and Technology, 2007, (04) : 280 - 282
12345