STREAMER IN HIGH GAIN GAAS PHOTOCONDUCTIVE SEMICONDUCTOR SWITCHES

被引：0
|
作者：
Liu, Hong [1 ]
Ruan, Chengli [1 ]
机构：
[1] Univ Elect Sci & Technol China, Coll Phys Elect, Chengdu 610054, Sichuan, Peoples R China
来源：
2009 IEEE PULSED POWER CONFERENCE, VOLS 1 AND 2 | 2009年
关键词：
DOMAINS; MODEL;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The streamer formation and propagation in high gain semi-insulating (SI) GaAs photoconductive semiconductor switches (PCSS) is analyzed in detail This streamer model on the basis of photo-ionization, growing domain, and the collective impact ionization (CII) mechanism can explain the propagation velocity and the branch and the bend of streamer. This model is characterized by introducing the growing domain between photo-ionization and collective avalanche carrier generation during each stage in which the streamer forms. The calculated results of photo-ionization effects and the propagation velocities of streamer imply that this model is reasonable because the results are consistent with the reported experimental observations.
引用
收藏
页码：660 / 665
页数：6
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