Annealing behavior and solid-state reactions of Pd-Ge alloy thin films

被引：4

作者：

Chen, ZW ^{[1
]}

Shek, CH ^{[1
]}

Lai, JKL ^{[1
]}

机构：

[1] City Univ Hong Kong, Dept Phys & Mat Sci, Hong Kong, Hong Kong, Peoples R China

来源：

MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING | 2004年 / 385卷 / 1-2期

关键词：

Pd-Ge alloy thin films; solid-state reaction; crystallization; annealing behavior;

D O I：

10.1016/j.msea.2004.07.005

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Solid-state reactions and amorphous Ge crystallization for various ratios of thickness (or composition) in Pd-Ge alloy thin films after annealing have been investigated by transmission electron microscopy. Besides polycrystalline Pd (p-Pd) and amorphous Ge (a-Ge), polycrystalline Pd2Ge (p-Pd2Ge) phase is also formed in as-evaporated films. During annealing at 250degreesC, polycrystalline Pd2Ge and PdGe are formed. The experimental results indicate that the formation of Pd2Ge and PdGe compounds may be dominant at low annealing temperatures, and also affect amorphous Ge crystallization. The reactions are sensitively dependent on the annealing temperatures and the thickness ratio of Pd and Ge films. The reactions and amorphous Ge crystallization are mutually competitive in Pd-Ge alloy thin films. (C) 2004 Published by Elsevier B.V.

引用

页码：455 / 459

页数：5

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