Performance of single-electron transistor logic composed of multi-gate single-electron transistors

被引:18
|
作者
Jeong, MY
Jeong, YH
Hwang, SW
Kim, DM
机构
[1] Pohang Univ Sci & Technol, Dept Elect & Elect Engn, Nam Ku, Kyungbuk 790784, South Korea
[2] Korea Univ, Sch Elect Engn, Sungbuk Ku, Seoul 136701, South Korea
关键词
single-electron tunneling; Coulomb blockade; single-electron transistor; single-electron transistor logic; multi-gate single-electron transistor;
D O I
10.1143/JJAP.36.6706
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have performed Monte Carlo studies of complementary capacitively coupled single-electron transistor (complementary C-SET) logic gates for single-electron digital logic circuits. The simulations carried out with various types of complementary C-SET logic gates showed that serial connections of single-electron transistors necessary for multi-input operations resulted in the degradation of the switching speed. It is pointed out that the multi-gate single-electron transistor configuration can provide a possible means to circumvent this problem. However, the associated nonsymmetric input-output characteristics could cause the operation failure of the circuit. It is shown that the multi-gate single-electron transistor circuits are the optimal choice from the standpoint of high speed operation and design simplicity, when confined to the input voltages not exceeding four terminals.
引用
收藏
页码:6706 / 6710
页数:5
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