I-V and C-V Characterization of a High-Responsivity Graphene/Silicon Photodiode with Embedded MOS Capacitor

被引：62
|
作者：
Luongo, Giuseppe [1 ,2 ]
Giubileo, Filippo [2 ]
Genovese, Luca [1 ]
Iemmo, Laura [1 ]
Martucciello, Nadia [2 ]
Di Bartolomeo, Antonio [1 ,2 ]
机构：
[1] Univ Salerno, Dipartimento Fis ER Caianiello, Via Giovanni Paolo 2 132, I-84084 Fisciano, Italy
[2] CNR, SPIN Salerno, Via Giovanni Paolo 2 132, I-84084 Fisciano, Italy
来源：
NANOMATERIALS | 2017年 / 7卷 / 07期
关键词：
graphene; Schottky barrier; MOS capacitor; photodiode; photocurrent; CONTACT RESISTANCE; SI;
D O I：
10.3390/nano7070158
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
We study the effect of temperature and light on the I-V and C-V characteristics of a graphene/silicon Schottky diode. The device exhibits a reverse-bias photocurrent exceeding the forward current and achieves a photoresponsivity as high as 2.5 A/W. We show that the enhanced photocurrent is due to photo-generated carriers injected in the graphene/Si junction from the parasitic graphene/SiO2/Si capacitor connected in parallel to the diode. The same mechanism can occur with thermally generated carriers, which contribute to the high leakage current often observed in graphene/Si junctions.
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页数：8
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