I-V and C-V Characterization of a High-Responsivity Graphene/Silicon Photodiode with Embedded MOS Capacitor

被引：62
|
作者：
Luongo, Giuseppe [1 ,2 ]
Giubileo, Filippo [2 ]
Genovese, Luca [1 ]
Iemmo, Laura [1 ]
Martucciello, Nadia [2 ]
Di Bartolomeo, Antonio [1 ,2 ]
机构：
[1] Univ Salerno, Dipartimento Fis ER Caianiello, Via Giovanni Paolo 2 132, I-84084 Fisciano, Italy
[2] CNR, SPIN Salerno, Via Giovanni Paolo 2 132, I-84084 Fisciano, Italy
来源：
NANOMATERIALS | 2017年 / 7卷 / 07期
关键词：
graphene; Schottky barrier; MOS capacitor; photodiode; photocurrent; CONTACT RESISTANCE; SI;
D O I：
10.3390/nano7070158
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
We study the effect of temperature and light on the I-V and C-V characteristics of a graphene/silicon Schottky diode. The device exhibits a reverse-bias photocurrent exceeding the forward current and achieves a photoresponsivity as high as 2.5 A/W. We show that the enhanced photocurrent is due to photo-generated carriers injected in the graphene/Si junction from the parasitic graphene/SiO2/Si capacitor connected in parallel to the diode. The same mechanism can occur with thermally generated carriers, which contribute to the high leakage current often observed in graphene/Si junctions.
引用
收藏
页数：8
相关论文
共 50 条
  • [11] Hot carrier effect - model, mechanism and effects on C-V and I-V characteristics in MOS structures
    Cezhou, Zhao
    Desheng, Zhang
    Baohua, Shi
    Microelectronics Reliability, 1996, 36 (04) : 493 - 496
  • [12] Hot carrier effect - Model, mechanism and effects on C-V and I-V characteristics in MOS structures
    Zhao, CZ
    Zhang, DS
    Shi, BH
    MICROELECTRONICS AND RELIABILITY, 1996, 36 (04): : 493 - 496
  • [13] Modelling the C-V characteristics of MOS capacitor on high resistivity silicon substrate for PIN photodetector applications
    Luna-Lopez, J. A.
    Aceves-Mijares, M.
    Malik, Oleksandr
    Glaenzer, R.
    REVISTA MEXICANA DE FISICA, 2006, 52 (02) : 45 - 47
  • [14] High-responsivity silicon p-i-n mesa-photodiode
    Kukurudziak, M. S.
    Maistruk, E., V
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2023, 38 (08)
  • [15] Evaluation of the High Temperatures Influence on High Frequency C-V Curves of MOS Capacitor
    Borges Ziliotto, Ana Paula
    Bellodi, Marcello
    STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS 53 (SOTAPOCS 53), 2011, 41 (06): : 163 - 173
  • [16] Characterization of ultra-thin oxides using electrical C-V and I-V measurements
    Hauser, JR
    Ahmed, K
    CHARACTERIZATION AND METROLOGY FOR ULSI TECHNOLOGY, 1998, 449 : 235 - 239
  • [17] Analysis of C-V and I-V data of BST thin films
    Symetrix Corp, Colorado Springs, United States
    Integr Ferroelectr, 1 -4 pt 1 (133-140):
  • [18] Analysis of C-V and I-V data of BST thin films
    Joshi, V
    Dacruz, CP
    Cuchiaro, JD
    Araujo, CA
    Zuleeg, R
    INTEGRATED FERROELECTRICS, 1997, 14 (1-4) : 133 - 140
  • [19] Automatic statistical full quantum analysis of C-V and I-V characteristics for advanced MOS gate stacks
    Leroux, C.
    Allain, F.
    Toffoli, A.
    Ghibaudo, G.
    Reimbold, G.
    MICROELECTRONIC ENGINEERING, 2007, 84 (9-10) : 2408 - 2411
  • [20] TECHNIQUE FOR PLOTTING NONEQUILIBRIUM C-V CURVES OF AN MOS CAPACITOR
    OLENSKI, J
    MACHALICA, P
    ELECTRONICS LETTERS, 1975, 11 (11) : 232 - 234
12345