Synthesis of low-k porous silica films via freeze drying

被引：23
|
作者：
Hyun, SH [1 ]
Kim, TY [1 ]
Kim, GS [1 ]
Park, HH [1 ]
机构：
[1] Yonsei Univ, Sch Mat Sci & Engn, Coll Engn, Seoul 120749, South Korea
来源：
JOURNAL OF MATERIALS SCIENCE LETTERS | 2000年 / 19卷 / 20期
关键词：
D O I：
10.1023/A:1006775213914
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Low-k porous silica thin films were synthesized using the freeze drying technique. This new technique is simpler and inexpensive in comparison with the supercritical or ambient pressure drying technique. The film thickness was very sensitive to spin rpm and could be controlled in the range of 1100 nm-250 nm by adjusting rpm from 1000 to 7000. The average porosity and the dielectric constant of freeze-dried films were found to be approximately 60% (0.9 g/cm3).
引用
收藏
页码：1863 / 1866
页数：4
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