Synthesis of low-k porous silica films via freeze drying

被引：23

作者：

Hyun, SH ^{[1
]}

Kim, TY ^{[1
]}

Kim, GS ^{[1
]}

Park, HH ^{[1
]}

机构：

[1] Yonsei Univ, Sch Mat Sci & Engn, Coll Engn, Seoul 120749, South Korea

来源：

JOURNAL OF MATERIALS SCIENCE LETTERS | 2000年 / 19卷 / 20期

关键词：

D O I：

10.1023/A:1006775213914

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Low-k porous silica thin films were synthesized using the freeze drying technique. This new technique is simpler and inexpensive in comparison with the supercritical or ambient pressure drying technique. The film thickness was very sensitive to spin rpm and could be controlled in the range of 1100 nm-250 nm by adjusting rpm from 1000 to 7000. The average porosity and the dielectric constant of freeze-dried films were found to be approximately 60% (0.9 g/cm3).

引用

页码：1863 / 1866

页数：4

共 50 条

[21] Synthesis and characterization of pure-silica-zeolite Beta low-k thin films
Chen, Yanli
Zhu, Guangshan
Peng, Ye
Bi, Hai
Feng, Jing
Qiu, Shilun
MICROPOROUS AND MESOPOROUS MATERIALS, 2009, 123 (1-3) : 45 - 49
[22] Silica zeolite low-K dielectric thin films.
Yan, YS
ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2004, 227 : U478 - U478
[23] Temperature dependence of porogen desorption from low-k porous silica films incorporated with ethylene groups
Uchida, Y
Maruyama, Y
Katoh, T
Ito, Y
Ishida, K
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (4B): : 2316 - 2319
[24] Development of Porous Silica Ultra Low-k Films for 32 nm-node Interconnects and beyond
Yamazaki, T.
Hirakawa, M.
Nakayama, T.
Murakami, H.
PROCEEDINGS OF THE 2009 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, 2009, : 119 - 121
[25] Simulations of diffusion barrier deposition on porous low-k films
Yanovitskaya, ZS
Zverev, AV
Shamiryan, D
Maex, K
MICROELECTRONIC ENGINEERING, 2003, 70 (2-4) : 363 - 367
[26] Energetics of porous amorphous low-k SiOCH dielectric films
Chen, Jiewei
Calvin, Jason J.
King, Sean W.
Woodfield, Brian F.
Navrotsky, Alexandra
JOURNAL OF CHEMICAL THERMODYNAMICS, 2019, 139
[27] Porous silicon via freeze drying
Ist. Elettrotecn. Naz. Galileo F., Str. delle Cacce 91, 1-10135 Turin, Italy
不详
Mater Lett, 6 (295-298):
[28] Porous silicon via freeze drying
Amato, G
Brunetto, N
MATERIALS LETTERS, 1996, 26 (06) : 295 - 298
[29] A scalable low-k/Cu interconnect technology using self-assembled ultra--low-k porous silica films
Kikkawa, T
Oku, Y
Kohmura, K
Fujii, N
Tanaka, H
Goto, T
Ishikawa, A
Matsuo, H
Miyoshi, H
Nakano, A
Sonoda, Y
Hata, N
Seino, Y
Yoshino, T
Takada, S
Kinoshita, K
2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS, 2004, : 493 - 496
[30] Preparation of low-k and low-n mesoporous silica films via sol-gel process
Shen Jun
Ling, Ouyang
Lin Xuejing
Xie Zhiyong
Luo Aiyun
RARE METAL MATERIALS AND ENGINEERING, 2008, 37 : 76 - 79

← 1 2 3 4 5 →