The electro-optic properties of interdiffused InGaAs/InP quantum well structures

被引：6
|
作者：
Weiss, BL
Chan, Y
Shiu, WC
Li, EH [1 ]
机构：
[1] Univ Surrey, Dept Elect & Elect Engn, Guildford GU2 5XH, Surrey, England
[2] Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R China
[3] Hong Kong Baptist Univ, Dept Math, Hong Kong, Hong Kong, Peoples R China
来源：
JOURNAL OF APPLIED PHYSICS | 2000年 / 88卷 / 06期
关键词：
D O I：
10.1063/1.1285840
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We present a model for the optical properties of interdiffused InGaAs/InP quantum well structures. The structure is investigated in a two-phase group V interdiffusion that is characterized by three parameters: the interdiffusion coefficient in the barrier layer, the well layer, and the concentration ratio of diffused species at the well/barrier interface. The quantum confined Stark effect is considered including the exciton and full subband under an applied electric field. Results show interesting optical properties for the TE and TM polarization and a tunable operation wavelength near 1.55 mu m for modulators. (C) 2000 American Institute of Physics. [S0021-8979(00)00609-5].
引用
收藏
页码：3418 / 3425
页数：8
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