Electro-optic properties of GaInAsSb/GaAs quantum well for high-speed integrated optoelectronic devices

被引：10

作者：

Thoma, Jiri ^{[1
,2
]}

Liang, Baolai ^{[3
,4
]}

Reyner, Charles ^{[3
,4
]}

Ochalski, Tomasz ^{[1
,2
]}

Williams, David ^{[1
,2
]}

Hegarty, Stephen P. ^{[2
]}

Huffaker, Diana ^{[3
,4
]}

Huyet, Guillaume ^{[1
,2
]}

机构：

[1] Cork Inst Technol, CAPPA, Cork, Ireland

[2] Tyndall Natl Inst, Cork, Ireland

[3] Univ Calif Los Angeles, Calif NanoSyst Inst, Los Angeles, CA 90095 USA

[4] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 01期

基金：

爱尔兰科学基金会;

关键词：

MOLECULAR-BEAM EPITAXY; OPTICAL-PROPERTIES; THRESHOLD-CURRENT; SB SURFACTANT; LASERS; GAINNAS; RECOMBINATION;

D O I：

10.1063/1.4775371

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electro-optic properties of strained GaInAsSb/GaAs quantum wells (QWs) are investigated. A single QW p-i-n sample was grown by molecular beam epitaxy with antimony (Sb) pre-deposition technique. We numerically predict and experimentally verify a strong quantum confined Stark shift of 40 nm. We also predict a fast absorption recovery times crucial of high-speed optoelectronic devices mainly due to strong electron tunneling and thermionic emission. Predicted recovery times are corroborated by bias and temperature dependent time-resolved photoluminescence measurements indicating (<= 30 ps) recovery times. This makes GaInAsSb QW an attractive material particularly for electroabsorption modulators and saturable absorbers. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4775371]

引用

页数：4

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