Class E RF tuned power amplifiers in CMOS technologies: Theory and circuit design considerations

被引:5
|
作者
Tu, SHL [1 ]
机构
[1] Fu Jen Catholic Univ, Dept Elect Engn, Taipei, Taiwan
关键词
D O I
10.1109/MCOM.2004.1336718
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This article introduces several configurations of Class E power amplifiers in CMOs technologies. Each configuration, however, alleviates some problems in the design of Class E power amplifiers. The two-stage Class E power amplifier reveals the design technique for the driving stage, which provides a more efficient driving signal in terms of Class E operation. The complementary configuration takes advantage of the symmetrical circuit topology, which allows much lower total harmonic distortion in the output signal. The power-adaptive technique based on high-Q varactors gives a more feasible and effective approach to achieving the function of output power control for switching-mode power amplifiers. An approach to implement linear power amplification using switching mode power amplifiers is also introduced that can achieve linear amplification while still keeping high power efficiency and output power.
引用
收藏
页码:S6 / S11
页数:6
相关论文
共 50 条
  • [1] Analysis and design of power-controllable CMOS class E RF-tuned power amplifiers
    Tu, S. H. -L.
    IET POWER ELECTRONICS, 2012, 5 (04) : 428 - 434
  • [2] Low-distortion CMOS complementary class E RF tuned power amplifiers
    Tu, SHL
    Toumazou, C
    IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-FUNDAMENTAL THEORY AND APPLICATIONS, 2000, 47 (05): : 774 - 779
  • [3] Effect of the loaded quality factor on power efficiency for CMOS class-E RF tuned power amplifiers
    Tu, SHL
    Toumazou, C
    IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-FUNDAMENTAL THEORY AND APPLICATIONS, 1999, 46 (05): : 628 - 634
  • [4] Class-E cmos power amplifiers for RF applications
    Hung, TT
    El-Gamal, MN
    PROCEEDINGS OF THE 2003 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOL I: ANALOG CIRCUITS AND SIGNAL PROCESSING, 2003, : 449 - 452
  • [5] Design of highly-efficient power-controllable CMOS Class E RF power amplifiers
    Tu, SHL
    Toumazou, C
    ISCAS '99: PROCEEDINGS OF THE 1999 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOL 2: ANALOG AND DIGITAL CIRCUITS, 1999, : 602 - 605
  • [6] Design and optimization of CMOS RF power amplifiers
    Gupta, R
    Ballweber, BM
    Allstot, DJ
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2001, 36 (02) : 106 - 175
  • [7] Power gain of Class E and Class BVHF tuned power amplifiers
    Modzelewski, J
    MIKON-2004, VOL 1, CONFERENCE PROCEEDINGS, 2004, : 41 - 44
  • [8] A power-adaptive CMOS class E RF tuned power amplifier for wireless communications
    Tu, SHL
    IEEE INTERNATIONAL SOC CONFERENCE, PROCEEDINGS, 2003, : 365 - 368
  • [9] Analysis and Design of Fully Integrated High-Power Parallel-Circuit Class-E CMOS Power Amplifiers
    Lee, Ockgoo
    An, Kyu Hwan
    Kim, Hyungwook
    Lee, Dong Ho
    Han, Jeonghu
    Yang, Ki Seok
    Lee, Chang-Ho
    Kim, Haksun
    Laskar, Joy
    IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2010, 57 (03) : 725 - 734
  • [10] Design Considerations for 60 GHz CMOS Power Amplifiers
    He, Ying
    Zhao, Dixian
    Li, Lianming
    Reynaert, Patrick
    2010 ASIA-PACIFIC MICROWAVE CONFERENCE, 2010, : 1613 - 1616