Design of highly-efficient power-controllable CMOS Class E RF power amplifiers

被引：0
|
作者：
Tu, SHL [1 ]
Toumazou, C [1 ]
机构：
[1] Univ London Imperial Coll Sci Technol & Med, Dept Elect & Elect Engn, London SW7 2BT, England
来源：
ISCAS '99: PROCEEDINGS OF THE 1999 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOL 2: ANALOG AND DIGITAL CIRCUITS | 1999年
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D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
A highly-efficient, power-controllable CMOS Class E RF power amplifier is described. The power amplifier operates at 1.8 GHz and simulated with a 0.6-mu m CMOS process. By employing controllable capacitance for the output matching network, high power efficiencies can be maintained for a wide range of output power at a supply voltage of 2.5 V.
引用
收藏
页码：602 / 605
页数：2
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