Improvement of electrical and optical properties of ZnO thin films prepared by MOCVD using UV light irradiation and in situ H2 post-treatment

被引:17
|
作者
Myong, SY [1 ]
Lim, KS [1 ]
机构
[1] Korea Adv Inst Sci & Technol, Dept Elect Engn & Comp Sci, Taejon 305701, South Korea
关键词
ZnO; hydrogen post-treatment; MOCVD; photo-MOCVD; hydrogen incorporation;
D O I
10.1016/j.solmat.2004.06.005
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
We have investigated the effect of ultraviolet (UV) light irradiation during the deposition of nominally undoped ZnO thin films using metalorganic chemical vapor deposition (MOCVD) and/or in situ hydrogen post-treatment. Due to the desorption of oxygen and incorporation of hydrogen as a shallow donor at the surface, the ZnO film prepared by the photo-MOCVD and in situ hydrogen post-treatment shows the highest film quality as a transparent conductive electrode for thin-film solar cells. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:105 / 112
页数:8
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