Improvement of electrical and optical properties of ZnO thin films prepared by MOCVD using UV light irradiation and in situ H2 post-treatment

被引:17
|
作者
Myong, SY [1 ]
Lim, KS [1 ]
机构
[1] Korea Adv Inst Sci & Technol, Dept Elect Engn & Comp Sci, Taejon 305701, South Korea
关键词
ZnO; hydrogen post-treatment; MOCVD; photo-MOCVD; hydrogen incorporation;
D O I
10.1016/j.solmat.2004.06.005
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
We have investigated the effect of ultraviolet (UV) light irradiation during the deposition of nominally undoped ZnO thin films using metalorganic chemical vapor deposition (MOCVD) and/or in situ hydrogen post-treatment. Due to the desorption of oxygen and incorporation of hydrogen as a shallow donor at the surface, the ZnO film prepared by the photo-MOCVD and in situ hydrogen post-treatment shows the highest film quality as a transparent conductive electrode for thin-film solar cells. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:105 / 112
页数:8
相关论文
共 50 条
  • [21] Influence of annealing on the structural, optical and photoluminescence properties of ZnO thin films for enhanced H2 sensing application
    Vijayalakshmi, K.
    Karthick, K.
    Gopalakrishna, D.
    CERAMICS INTERNATIONAL, 2013, 39 (05) : 4749 - 4756
  • [22] Electrical and optical properties of In2O3-ZnO thin films prepared by sol-gel method
    Lee, SY
    Park, BO
    THIN SOLID FILMS, 2005, 484 (1-2) : 184 - 187
  • [23] THE ELECTRICAL AND OPTICAL-PROPERTIES OF THE ZNO-SNO2 THIN-FILMS PREPARED BY RF MAGNETRON SPUTTERING
    ENOKI, H
    NAKAYAMA, T
    ECHIGOYA, J
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1992, 129 (01): : 181 - 191
  • [24] Effect of 4He2+ ion irradiation on the optical, electrical, morphological, and structural properties of ZnO thin films
    Lopez-Suarez, Alejandra
    Acosta, Dwight
    Magana, Carlos
    MATERIALS RESEARCH EXPRESS, 2022, 9 (11)
  • [25] Effect of H2 treatment in barrier on interface, optical and electrical properties of InGaN light emitting diodes
    Li, Yangfeng
    Yan, Shen
    Hu, Xiaotao
    Song, Yimeng
    Deng, Zhen
    Du, Chunhua
    Wang, Wenqi
    Ma, Ziguang
    Wang, Lu
    Jia, Haiqiang
    Wang, Wenxin
    Zhou, Junming
    Jiang, Yang
    Chen, Hong
    SUPERLATTICES AND MICROSTRUCTURES, 2020, 145
  • [26] Heavily-doped ZnO:Al thin films prepared by using magnetron Co-sputtering: Optical and electrical properties
    Moon, Eun-A
    Jun, Young-Kil
    Kim, Nam-Hoon
    Lee, Woo-Sun
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2016, 69 (02) : 220 - 225
  • [27] Heavily-doped ZnO:Al thin films prepared by using magnetron Co-sputtering: Optical and electrical properties
    Eun-A Moon
    Young-Kil Jun
    Nam-Hoon Kim
    Woo-Sun Lee
    Journal of the Korean Physical Society, 2016, 69 : 220 - 225
  • [28] Influence of thickness of MgO overlayer on the properties of ZnO thin films prepared on c-plane sapphire for H2 sensing
    Vijayalakshmi, K.
    Karthick, K.
    Raj, P. Deepak
    Sridharan, M.
    CERAMICS INTERNATIONAL, 2014, 40 (01) : 827 - 833
  • [29] Optical properties and electrical characterization of p-type ZnO thin films prepared by thermally oxiding Zn3N2 thin films
    B. S. Li
    Y. C. Liu
    Z. Z. Zhi
    D. Z. Shen
    Y. M. Lu
    J. Y. Zhang
    X. W. Fan
    R. X. Mu
    Don O. Henderson
    Journal of Materials Research, 2003, 18 : 8 - 13
  • [30] Optical properties and electrical characterization of p-type ZnO thin films prepared by thermally oxiding Zn3N2 thin films
    Li, BS
    Liu, YC
    Zhi, ZZ
    Shen, DZ
    Lu, YM
    Zhang, JY
    Fan, XW
    Mu, RX
    Henderson, DO
    JOURNAL OF MATERIALS RESEARCH, 2003, 18 (01) : 8 - 13