A 60GHz Power Amplifier with 12.1 dBm & P1dBCP in 0.18um SiGe BiCMOS Process

被引：0

作者：

Lim, Wei Meng ^{[1
]}

Gu, Jiangmin ^{[2
]}

Feng, Jialin ^{[2
]}

Yeo, Kiat Seng ^{[1
]}

Yu, Xiaopeng ^{[3
]}

Siek, Liter ^{[1
]}

Lim, Kok Meng ^{[1
]}

Boon, Chirn Chye ^{[1
]}

Yang, Wanlan ^{[1
]}

Yan, Jinna ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

[2] Soochow Univ, Sch Elect & Informat Engn, Suzhou 215006, Peoples R China

[3] Zhejiang Univ, Sch Elect Engn, Hangzhou 310027, Peoples R China

来源：

2013 INTERNATIONAL SOC DESIGN CONFERENCE (ISOCC) | 2013年

关键词：

power amplifier; SiGe; 60GHz ISM band; P-1dB; P-sat; PAE;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

This paper describes the design and analysis of a four-stages 60GHz SiGe BiCMOS power amplifier. The proposed circuit uses single-ended common-emitter topology that draws 72mW from 1.8V supply. It is able to deliver 12.1dBm output, 17.4dB power gain with a peak 14.1% PAE at its compression point. The S21 has a 3dB bandwidth from 55GHz to 67GHz, which covers the whole of 60GHz band. The power amplifier occupy a silicon area of 1.1 x 0.46 um(2) and the measured results show that it can be fully adopted in the 60GHz ISM band applications.

引用

页码：138 / 141

页数：4

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