A 60GHz Power Amplifier with 12.1 dBm & P1dBCP in 0.18um SiGe BiCMOS Process

被引:0
|
作者
Lim, Wei Meng [1 ]
Gu, Jiangmin [2 ]
Feng, Jialin [2 ]
Yeo, Kiat Seng [1 ]
Yu, Xiaopeng [3 ]
Siek, Liter [1 ]
Lim, Kok Meng [1 ]
Boon, Chirn Chye [1 ]
Yang, Wanlan [1 ]
Yan, Jinna [1 ]
机构
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
[2] Soochow Univ, Sch Elect & Informat Engn, Suzhou 215006, Peoples R China
[3] Zhejiang Univ, Sch Elect Engn, Hangzhou 310027, Peoples R China
关键词
power amplifier; SiGe; 60GHz ISM band; P-1dB; P-sat; PAE;
D O I
暂无
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
This paper describes the design and analysis of a four-stages 60GHz SiGe BiCMOS power amplifier. The proposed circuit uses single-ended common-emitter topology that draws 72mW from 1.8V supply. It is able to deliver 12.1dBm output, 17.4dB power gain with a peak 14.1% PAE at its compression point. The S21 has a 3dB bandwidth from 55GHz to 67GHz, which covers the whole of 60GHz band. The power amplifier occupy a silicon area of 1.1 x 0.46 um(2) and the measured results show that it can be fully adopted in the 60GHz ISM band applications.
引用
收藏
页码:138 / 141
页数:4
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