BSIM3 RF models for MOS transistors: A novel technique for substrate network extraction

被引：0

作者：

Rustagi, SC ^{[1
]}

Liao, HL ^{[1
]}

Shi, JL ^{[1
]}

Xiong, YZ ^{[1
]}

机构：

[1] Inst Microelect, Singapore 117685, Singapore

来源：

ICMTS 2003: PROCEEDINGS OF THE 2003 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES | 2003年

关键词：

D O I：

10.1109/ICMTS.2003.1197427

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a novel technique for extraction of substrate network and other extrinsic elements of the RF model for the MOS transistors. RF measurements in the common-gate configuration of the MOS transistors are used for the extraction of the substrate network. The values of the extracted substrate network elements are found to consistently scale with number of fingers. The measured large signal behavior (P-in-P-out characteristics) compare very well with the one modeled by the extracted parameters.

引用

页码：118 / 123

页数：6

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