BSIM3 RF models for MOS transistors: A novel technique for substrate network extraction

被引：0

作者：

Rustagi, SC ^{[1
]}

Liao, HL ^{[1
]}

Shi, JL ^{[1
]}

Xiong, YZ ^{[1
]}

机构：

[1] Inst Microelect, Singapore 117685, Singapore

来源：

ICMTS 2003: PROCEEDINGS OF THE 2003 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES | 2003年

关键词：

D O I：

10.1109/ICMTS.2003.1197427

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a novel technique for extraction of substrate network and other extrinsic elements of the RF model for the MOS transistors. RF measurements in the common-gate configuration of the MOS transistors are used for the extraction of the substrate network. The values of the extracted substrate network elements are found to consistently scale with number of fingers. The measured large signal behavior (P-in-P-out characteristics) compare very well with the one modeled by the extracted parameters.

引用

页码：118 / 123

页数：6

共 50 条

[21] Effects of Temperature and Channel Doping on the BSIM3 Threshold Voltage Model of NMOSFET form Substrate Bias Dependent Methodology
Muanghlua, Rangson
Niemcharoen, Surasak
Poyai, Amporn
Ruangphanit, Anucha
2016 INTERNATIONAL ELECTRICAL ENGINEERING CONGRESS, IEECON2016, 2016, : 128 - 131
[22] RF characterization of substrate coupling between TSV and MOS transistors in 3D integrated circuits
Brocard, M.
Bermond, C.
Lacrevaz, T.
Farcy, A.
Le Maitre, P.
Scheer, P.
Leduc, P.
Cheramy, S.
Flechet, B.
2013 IEEE INTERNATIONAL 3D SYSTEMS INTEGRATION CONFERENCE (3DIC), 2013,
[23] Modelling technique for high-voltage MOS devices with BSIM3v3
Myono, T
Nishibe, E
Iwatsu, K
Kikuchi, S
Suzuki, T
Sasaki, Y
Itoh, K
Kobayashi, H
ELECTRONICS LETTERS, 1998, 34 (18) : 1790 - 1791
[24] A new extraction method for BSIM3v3 model parameters of RF silicon MOSFETs
Lee, S
Yu, HK
ICMTS 1999: PROCEEDINGS OF THE 1999 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES, 1999, : 95 - 98
[25] A Novel Method of Intrinsic Parameters Extraction for RF LDMOS Transistors
Yin, Lijuan
Song, Helun
PROCEEDINGS OF 2016 IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUITS AND MICROSYSTEMS (ICICM), 2016, : 114 - 117
[26] Novel fabrication technique for dual-gate MOS transistors
Zingg, R.P., 1600, (10):
[27] BSIM3 parameters extraction of a 0:35 μm CMOS technology from 300K down to 77K
Varizat, Laurent
Sou, Gerard
Mansour, Malik
12TH INTERNATIONAL WORKSHOP ON LOW TEMPERATURE ELECTRONICS, 2017, 834
[28] New RF extrinsic resistances extraction procedure for deep-submicron MOS transistors
Tinoco, J. C.
Raskin, J. -P.
INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS, 2010, 23 (02) : 107 - 126
[29] Statistical BSIM3 model parameter extraction and fast/slow model parameter determination for high speed SRAM parametric yield estimation
Miyama, M
Kamohara, S
Nakura, K
Shinozaki, M
Akioka, T
Okuyama, K
Kubota, K
2000 5TH INTERNATIONAL WORKSHOP ON STATISTICAL METROLOGY, 2000, : 42 - 45
[30] Current dumping : A novel linearisation technique for RF power transistors
Sandhiya, P
Snowden, CM
Pollard, RD
Ranson, RG
1999 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-4, 1999, : 815 - 818

← 1 2 3 4 5 →