Photoluminescence and optical quenching of photoconductivity studies on undoped GaN grown by molecular beam epitaxy

被引：7

作者：

Xu, HZ

Wang, ZG

Harrison, I

Bell, A

Ansell, BJ

Winser, AJ

Cheng, TS

Foxon, CT

Kawabe, M ^{[1
]}

机构：

[1] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

[2] Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China

[3] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England

[4] Univ Nottingham, Sch Elect & Elect Engn, Nottingham NG7 2RD, England

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 217卷 / 03期

基金：

中国国家自然科学基金;

关键词：

GaN; photoluminescence; optical quenching of photoconductivity; native defect level; molecular beam epitaxy;

D O I：

10.1016/S0022-0248(00)00526-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Deep levels in undoped GaN materials grown by modified molecular beam epitaxy (MBE) are investigated by photoluminescence (PL) and optical quenching of photoconductivity measurements. A broad band which extends from 2.1 to 3.0 eV with a maximum at about 2.7 eV is observed, and four prominent quenching bands were found located at 2.18, 2.40, 2.71, and 2.78 eV above the valence band, respectively. These levels are attributed to four holes trap levels existence in the material. The defects cannot be firmly identified at present. (C) 2000 Elsevier Science B.V, All rights reserved.

引用

页码：228 / 232

页数：5

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