Optical quenching of photoconductivity in GaN photoconductors

被引：33
|
作者：
Huang, ZC
Mott, DB
Shu, PK
Zhang, R
Chen, JC
Wickenden, DK
机构：
[1] UNIV MARYLAND BALTIMORE CTY,DEPT COMP SCI & ELECT ENGN,BALTIMORE,MD 21228
[2] NASA,GODDARD SPACE FLIGHT CTR,SOLID STATE DEVICE DEV BRANCH,GREENBELT,MD 20771
[3] JOHNS HOPKINS UNIV,APPL PHYS LAB,LAUREL,MD 20723
来源：
JOURNAL OF APPLIED PHYSICS | 1997年 / 82卷 / 05期
关键词：
D O I：
10.1063/1.366090
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The observation of optical quenching of photoconductivity in GaN photoconductors temperature is reported on. Three prominent quenching bands were found at E-v + 1.44, 1.58, and 2.20 eV, respectively. These levels are related to three hole traps in GaN materials based on a hole trap model to interpret the quenching mechanism. The responsivity was reduced about 12% with an additional He-Ne laser shining on the photoconductor. (C) 1997 American Institute of Physics.
引用
收藏
页码：2707 / 2709
页数：3
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