C60 adsorption on the Si(110)-(16x2) surface

被引:10
|
作者
Ma, YR [1 ]
Moriarty, P [1 ]
Upward, MD [1 ]
Beton, PH [1 ]
机构
[1] Univ Nottingham, Dept Phys, Nottingham NG7 2RD, England
基金
英国工程与自然科学研究理事会;
关键词
adsorption kinetics; coatings; fullerenes; scanning tunneling microscopy; silicon;
D O I
10.1016/S0039-6028(97)00716-4
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The interaction of C-60 with the Si(110)-(16 x 2) surface has been studied using a scanning tunnelling microscope (STM). For a submonolayer coverage isolated C-60 molecules are observed with no evidence for a preferential adsorption site. As the coverage is increased. a disordered monolayer is observed and at still higher coverage disordered aggregates are observed which ripen into hexagonally ordered islands. These islands could be disrupted by the STM tip and were desorbed by annealing. Our results show that the interaction between the disordered layer and C,, islands is weak. However, the first monolayer is strongly bonded to the Si surface and forms a passivating layer which is stable to exposure to atmospheric. (C) 1998 Elsevier Science B.V.
引用
收藏
页码:421 / 425
页数:5
相关论文
共 50 条
  • [31] C60 adsorption on the Si(111)-p(7x7) surface: A theoretical study
    Rurali, R.
    Cuadrado, R.
    Cerda, J. I.
    PHYSICAL REVIEW B, 2010, 81 (07):
  • [32] High resolution syncrotron radiation Si 2p core-level spectroscopy of Si(110)16x2
    Cricenti, A
    LeLay, G
    Aristov, VY
    Nesterenko, B
    Safta, N
    Lacharme, JP
    Sebenne, CA
    TalebIbrahimi, A
    Indlekofer, G
    JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1995, 76 : 613 - 617
  • [33] Epitaxial silicon overgrowth of C60 on the Si(100)-2 x 1 surface
    Senftleben, Oliver
    Stimpel-Lindner, Tanja
    Eisele, Ignaz
    Baumgaertner, Hermann
    SURFACE SCIENCE, 2008, 602 (02) : 493 - 498
  • [34] Chemisorption of C60 on the Si(001)-2 x 1 surface at room temperature
    Cheng, CP
    Pi, TW
    Ouyang, CP
    Wen, JF
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2005, 23 (03): : 1018 - 1023
  • [35] ADSORPTION OF C60 AND C84 ON THE SI(100)2X1 SURFACE STUDIED BY USING THE SCANNING TUNNELING MICROSCOPE
    WANG, XD
    HASHIZUME, T
    SHINOHARA, H
    SAITO, Y
    NISHINA, Y
    SAKURAI, T
    PHYSICAL REVIEW B, 1993, 47 (23): : 15923 - 15930
  • [36] C60 adsorption on Cu(110) studied by optical spectroscopy
    Zhang, L.
    Fu, X.
    Sun, L. D.
    Zeppenfeld, P.
    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2014, 8 (02): : 133 - 136
  • [37] Spin- and angle-resolved photoemission studies of the electronic structure of Si(110)"16x2" surfaces
    Lewis, N. K.
    Lassailly, Y.
    Martinelli, L.
    Vobornik, I
    Fujii, J.
    Bigi, C.
    Brunkow, E.
    Clayburn, N. B.
    Gay, T. J.
    Flavell, W. R.
    Seddon, E. A.
    PHYSICAL REVIEW B, 2019, 100 (07)
  • [38] Selective Adsorption of C60 on Ge/Si Nanostructures
    Korte, Stefan
    Romanyuk, Konstantin
    Schnitzler, Bastian
    Cherepanov, Vasily
    Voigtlaender, Bert
    Filimonov, Sergey N.
    PHYSICAL REVIEW LETTERS, 2012, 108 (11)
  • [39] Manipulation of C60 molecules on a Si surface
    Appl Phys Lett, 8 (1075):
  • [40] Adsorption and thermal decomposition of C60 on Co/Si(111)-7 x 7
    Zilani, M. A. K.
    Xu, H.
    Sun, Y. Y.
    Wang, X. -S.
    Wee, A. T. S.
    APPLIED SURFACE SCIENCE, 2007, 253 (10) : 4554 - 4559