C60 adsorption on the Si(110)-(16x2) surface

被引：10
|
作者：
Ma, YR [1 ]
Moriarty, P [1 ]
Upward, MD [1 ]
Beton, PH [1 ]
机构：
[1] Univ Nottingham, Dept Phys, Nottingham NG7 2RD, England
来源：
SURFACE SCIENCE | 1998年 / 397卷 / 1-3期
基金：
英国工程与自然科学研究理事会;
关键词：
adsorption kinetics; coatings; fullerenes; scanning tunneling microscopy; silicon;
D O I：
10.1016/S0039-6028(97)00716-4
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The interaction of C-60 with the Si(110)-(16 x 2) surface has been studied using a scanning tunnelling microscope (STM). For a submonolayer coverage isolated C-60 molecules are observed with no evidence for a preferential adsorption site. As the coverage is increased. a disordered monolayer is observed and at still higher coverage disordered aggregates are observed which ripen into hexagonally ordered islands. These islands could be disrupted by the STM tip and were desorbed by annealing. Our results show that the interaction between the disordered layer and C,, islands is weak. However, the first monolayer is strongly bonded to the Si surface and forms a passivating layer which is stable to exposure to atmospheric. (C) 1998 Elsevier Science B.V.
引用
收藏
页码：421 / 425
页数：5
相关论文
共 50 条
  • [11] STM study of the initial stages of C60 adsorption on the Pt(110)-(1 x 2) surface
    Orzali, T.
    Petukhov, M.
    Sambi, M.
    Tondello, E.
    APPLIED SURFACE SCIENCE, 2006, 252 (15) : 5534 - 5537
  • [12] Si(110)16x2 and Si(110)2x3-Sb surfaces studied by photoemission and optical spectroscopy
    Cricenti, A
    Perfetti, P
    Nesterenko, B
    LeLay, G
    Sebenne, C
    APPLIED SURFACE SCIENCE, 1996, 104 : 118 - 123
  • [13] Long-range surface reconstruction:: Si(110)-(16x2) -: art. no. 136104
    Stekolnikov, AA
    Furthmüller, J
    Bechstedt, F
    PHYSICAL REVIEW LETTERS, 2004, 93 (13) : 136104 - 1
  • [14] Electronic structure of the Si(110)-(16x2) surface: High-resolution ARPES and STM investigation
    Sakamoto, Kazuyuki
    Setvin, Martin
    Mawatari, Kenji
    Eriksson, P. E. J.
    Miki, Kazushi
    Uhrberg, R. I. G.
    PHYSICAL REVIEW B, 2009, 79 (04):
  • [15] Elemental structure in Si(110)-"16x2" revealed by scanning tunneling microscopy
    An, T
    Yoshimura, M
    Ono, I
    Ueda, K
    PHYSICAL REVIEW B, 2000, 61 (04): : 3006 - 3011
  • [16] ATOMIC ARRANGEMENTS OF 16X2 AND (17,15,1)-2X1 STRUCTURES ON A SI(110) SURFACE
    YAMAMOTO, Y
    PHYSICAL REVIEW B, 1994, 50 (12): : 8534 - 8538
  • [17] Si(110)-16x2 and Si(110)-5x1 surface reconstructions: Stretched-hexagon face-centered adatom model
    Packard, WE
    Dow, JD
    PHYSICAL REVIEW B, 1997, 55 (23): : 15643 - 15651
  • [18] Electronic states of a clean Si(110) 16x2 surface studied by angle resolved photoemission and surface differential reflectivity
    Cricenti, A
    Nesterenko, B
    Perfetti, P
    LeLay, G
    Sebenne, C
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1996, 14 (04): : 2448 - 2453
  • [19] High-resolution photoemission spectroscopy study of the single-domain Si(110)-16x2 surface
    Kim, N. D.
    Kim, Y. K.
    Park, C. -Y.
    Yeom, H. W.
    Koh, H.
    Rotenberg, E.
    Ahn, J. R.
    PHYSICAL REVIEW B, 2007, 75 (12)
  • [20] Adsorption and transformation of C60 molecules at the (100) Si surface
    N. R. Gall
    E. V. Rut’kov
    A. Ya. Tontegode
    Semiconductors, 2002, 36 : 1008 - 1012
12345