First Demonstration of Semipolar Deep Ultraviolet Light Emitting Diode on m-Plane Sapphire with AlGaN Multiple Quantum Wells

被引：42

作者：

Balakrishnan, Krishnan ^{[1
]}

Adivarahan, Vinod ^{[2
]}

Fareed, Qhalid ^{[2
]}

Lachab, Mohamed ^{[1
]}

Zhang, Bin ^{[2
]}

Khan, Asif ^{[1
]}

机构：

[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

[2] Nitek Inc, Irmo, SC 29063 USA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 04期

关键词：

GALLIUM NITRIDE;

D O I：

10.1143/JJAP.49.040206

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the first demonstration of a semipolar AlGaN based deep ultraviolet (UV) light emitting diode (LED), with a peak emission wavelength of 307 nm. The LED structure was grown on an m-plane sapphire substrate using metal organic chemical vapor deposition (MOCVD). A combination of pulsed MOCVD (PMOCVD) grown AlN and a short period AlN/AlGaN superlattice structure was found to be instrumental in achieving singular semipolar structural phase of (11 (2) over bar2) with a defect density low enough to fabricate the light emitting device. The on-wafer optical output power of the fabricated LED was similar to 20 mu W at a dc pump current of 20 mA. (C) 2010 The Japan Society of Applied Physics

引用

页码：0402061 / 0402063

页数：3

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