m-Plane GaInN Light Emitting Diodes Grown on Patterned a-Plane Sapphire Substrates

被引：35
|
作者：
Saito, Yoshiki [1 ]
Okuno, Koji [1 ]
Boyama, Shinya [1 ]
Nakada, Naoyuki [1 ]
Nitta, Shugo [1 ]
Ushida, Yasuhisa [1 ]
Shibata, Naoki [1 ]
机构：
[1] Toyoda Gosei Co Ltd, Optoelect, Aichi 4901312, Japan
来源：
APPLIED PHYSICS EXPRESS | 2009年 / 2卷 / 04期
关键词：
GAN SUBSTRATE; QUANTUM-WELLS; SEMIPOLAR; BLUE;
D O I：
10.1143/APEX.2.041001
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The fabrication of a blue m-plane GaInN light emitting diode (LED) grown on an m-plane GaN layer grown on a 3-in. patterned sapphire substrate is reported. The output power of the LED was approximately 3 mW at the wavelength of 461 nm, a driving current of 20 mA, and a forward voltage of 3.5 V. This is the first report of nonpolar or semipolar blue LEDs grown on hetero-substrates with milliwatt scale output power. (C) 2009 The Japan Society of Applied Physics
引用
收藏
页码：0410011 / 0410013
页数：3
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