m-Plane GaInN Light Emitting Diodes Grown on Patterned a-Plane Sapphire Substrates

被引：35

作者：

Saito, Yoshiki ^{[1
]}

Okuno, Koji ^{[1
]}

Boyama, Shinya ^{[1
]}

Nakada, Naoyuki ^{[1
]}

Nitta, Shugo ^{[1
]}

Ushida, Yasuhisa ^{[1
]}

Shibata, Naoki ^{[1
]}

机构：

[1] Toyoda Gosei Co Ltd, Optoelect, Aichi 4901312, Japan

来源：

APPLIED PHYSICS EXPRESS | 2009年 / 2卷 / 04期

关键词：

GAN SUBSTRATE; QUANTUM-WELLS; SEMIPOLAR; BLUE;

D O I：

10.1143/APEX.2.041001

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The fabrication of a blue m-plane GaInN light emitting diode (LED) grown on an m-plane GaN layer grown on a 3-in. patterned sapphire substrate is reported. The output power of the LED was approximately 3 mW at the wavelength of 461 nm, a driving current of 20 mA, and a forward voltage of 3.5 V. This is the first report of nonpolar or semipolar blue LEDs grown on hetero-substrates with milliwatt scale output power. (C) 2009 The Japan Society of Applied Physics

引用

页码：0410011 / 0410013

页数：3

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