Nonpolar light-emitting diodes using hydrothermally grown a-plane ZnO

被引：0

作者：

Kim, Hyonwoong ^{[1
]}

Baik, Kwang Hyeon ^{[2
]}

Jang, Soohwan ^{[1
]}

机构：

[1] Dankook Univ, Dept Chem Engn, Yongin 448701, South Korea

[2] Hongik Univ, Dept Mat Sci & Engn, Jochiwon 339701, South Korea

来源：

STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS) 55 -AND- LOW-DIMENSIONAL NANOSCALE ELECTRONIC AND PHOTONIC DEVICES 6 | 2013年 / 58卷 / 08期

关键词：

FABRICATION;

D O I：

10.1149/05808.0011ecst

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

High quality a-plane (11-20) ZnO film has been successfully grown on a-plane GaN template by facile, low-cost, seed-layer-free hydrothermal solution method at low temperature. The surface of ZnO film consists of m-plane (1-100), which has the slowest growth rate and stable surface energy. Crystalline structure and morphology of a-plane ZnO were analyzed with XRD, TEM, SEM, and AFM. Furthermore, nonpolar a-plane n-ZnO/p-GaN light emitting diodes which showed sharp near-UV emissions at the low voltage of 3.5 V were fabricated.

引用

页码：11 / 15

页数：5

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