Nonpolar light-emitting diodes using hydrothermally grown a-plane ZnO

被引：0
|
作者：
Kim, Hyonwoong [1 ]
Baik, Kwang Hyeon [2 ]
Jang, Soohwan [1 ]
机构：
[1] Dankook Univ, Dept Chem Engn, Yongin 448701, South Korea
[2] Hongik Univ, Dept Mat Sci & Engn, Jochiwon 339701, South Korea
来源：
STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS) 55 -AND- LOW-DIMENSIONAL NANOSCALE ELECTRONIC AND PHOTONIC DEVICES 6 | 2013年 / 58卷 / 08期
关键词：
FABRICATION;
D O I：
10.1149/05808.0011ecst
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
High quality a-plane (11-20) ZnO film has been successfully grown on a-plane GaN template by facile, low-cost, seed-layer-free hydrothermal solution method at low temperature. The surface of ZnO film consists of m-plane (1-100), which has the slowest growth rate and stable surface energy. Crystalline structure and morphology of a-plane ZnO were analyzed with XRD, TEM, SEM, and AFM. Furthermore, nonpolar a-plane n-ZnO/p-GaN light emitting diodes which showed sharp near-UV emissions at the low voltage of 3.5 V were fabricated.
引用
收藏
页码：11 / 15
页数：5
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