A 512Gb 3b/cell 64-Stacked WL 3D V-NAND Flash Memory

被引：0

作者：

Kim, Chulbum ^{[1
]}

Cho, Ji-Ho ^{[1
]}

Jeong, Woopyo ^{[1
]}

Park, Il-han ^{[1
]}

Park, Hyun-Wook ^{[1
]}

Kim, Doo-Hyun ^{[1
]}

Kang, Daewoon ^{[1
]}

Lee, Sunghoon ^{[1
]}

Lee, Ji-Sang ^{[1
]}

Kim, Wontae ^{[1
]}

Park, Jiyoon ^{[1
]}

Ahn, Yang-lo ^{[1
]}

Lee, Jiyoung ^{[1
]}

Lee, Jong-hoon ^{[1
]}

Kim, Seungbum ^{[1
]}

Yoon, Hyun-Jun ^{[1
]}

Yu, Jaedoeg ^{[1
]}

Choi, Nayoung ^{[1
]}

Kwon, Yelim ^{[1
]}

Kim, Nahyun ^{[1
]}

Jang, Hwajun ^{[1
]}

Park, Jonghoon ^{[1
]}

Song, Seunghwan ^{[1
]}

Park, Yongha ^{[1
]}

Bang, Jinbae ^{[1
]}

Hong, Sangki ^{[1
]}

Jeong, Byunghoon ^{[1
]}

Kim, Hyun-Jin ^{[1
]}

Lee, Chunan ^{[1
]}

Min, Young-Sun ^{[1
]}

Lee, Inryul ^{[1
]}

Kim, In-Mo ^{[1
]}

Kim, Sung-Hoon ^{[1
]}

Yoon, Dongkyu ^{[1
]}

Kim, Ki-Sung ^{[1
]}

Choi, Youngdon ^{[1
]}

Kim, Moosung ^{[1
]}

Kim, Hyunggon ^{[1
]}

Kwak, Pansuk ^{[1
]}

Ihm, Jeong-Don ^{[1
]}

Byeon, Dae-Seok ^{[1
]}

Lee, Jin-yub ^{[1
]}

Park, Ki-Tae ^{[1
]}

Kyung, Kye-hyun ^{[1
]}

机构：

[1] Samsung Elect, Hwasung, South Korea

来源：

2017 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE (ISSCC) | 2017年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

11.4

引用

页码：202 / 202

页数：1

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