A 1Tb 4b/Cell 96-Stacked-WL 3D NAND Flash Memory with 30MB/s Program Throughput Using Peripheral Circuit Under Memory Cell Array Technique

被引：0

作者：

Huh, Hwang ^{[1
]}

Cho, Wanik ^{[1
]}

Lee, Jinhaeng ^{[1
]}

Noh, Yujong ^{[1
]}

Park, Yongsoon ^{[1
]}

Ok, Sunghwa ^{[1
]}

Kim, Jongwoo ^{[1
]}

Cho, Kayoung ^{[1
]}

Lee, Hyunchul ^{[1
]}

Kim, Geonu ^{[1
]}

Park, Kangwoo ^{[1
]}

Kim, Kwanho ^{[1
]}

Lee, Heejoo ^{[1
]}

Chai, Sooyeol ^{[1
]}

Kwon, Chankeun ^{[1
]}

Cho, Hanna ^{[1
]}

Jeong, Chanhui ^{[1
]}

Yang, Yujin ^{[1
]}

Goo, Jayoon ^{[1
]}

Park, Jangwon ^{[1
]}

Lee, Juhyeong ^{[1
]}

Kim, Heonki ^{[1
]}

Jo, Kangwook ^{[1
]}

Park, Cheoljoong ^{[1
]}

Nam, Hyeonsu ^{[1
]}

Song, Hyunseok ^{[1
]}

Lee, Sangkyu ^{[1
]}

Jeong, Woopyo ^{[1
]}

Ahn, Kun-Ok ^{[1
]}

Jung, Tae-Sung ^{[1
]}

机构：

[1] SK Hynix, Icheon, South Korea

来源：

2020 IEEE INTERNATIONAL SOLID- STATE CIRCUITS CONFERENCE (ISSCC) | 2020年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：220 / 221

页数：2

共 14 条

[1] A 1Tb 4b/Cell 64-Stacked-WL 3D NAND Flash Memory with 12MB/s Program Throughput
Lee, Seungjae
Kim, Chulbum
Kim, Minsu
Joe, Sung-min
Jang, Joonsuc
Kim, Seungbum
Lee, Kangbin
Kim, Jisu
Park, Jiyoon
Lee, Han-Jun
Kim, Minseok
Lee, Seonyong
Lee, SeonGeon
Bang, Jinbae
Shin, Dongjin
Jang, Hwajun
Lee, Deokwoo
Kim, Nahyun
Jo, Jonghoo
Park, Jonghoon
Park, Sohyun
Rho, Youngsik
Park, Yongha
Kim, Ho-joon
Lee, Cheon An
Yu, Chungho
Min, Youngsun
Kim, Moosung
Kim, Kyungmin
Moon, Seunghyun
Kim, Hyunjin
Choi, Youngdon
Ryu, YoungHwan
Choi, Jinwon
Lee, Minyeong
Kim, Jungkwan
Choo, Gyo Soo
Lim, Jeong-Don
Byeon, Dae-Seok
Song, Kiwhan
Park, Ki-Tae
Kyung, Kye-hyun
2018 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE - (ISSCC), 2018, : 340 - +
[2] A 1Tb 4b/Cell 144-Tier Floating-Gate 3D-NAND Flash Memory with 40MB/s Program Throughput and 13.8Gb/mm2 Bit Density
Khakifirooz, Ali
Balasubrahmanyam, Sriram
Fastow, Richard
Gaewsky, Kristopher H.
Ha, Chang Wan
Haque, Rezaul
Jungroth, Owen W.
Law, Steven
Madraswala, Aliasgar S.
Ngo, Binh
Prabhu, Naveen, V
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Shenoy, Rohit S.
Snyder, Jacqueline
Sun, Cindy
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Kalavade, Pranav
2021 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE (ISSCC), 2021, 64 : 424 - +
[3] A 512Gb 3b/cell 64-Stacked WL 3D V-NAND Flash Memory
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Jeong, Woopyo
Park, Il-han
Park, Hyun-Wook
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Kang, Daewoon
Lee, Sunghoon
Lee, Ji-Sang
Kim, Wontae
Park, Jiyoon
Ahn, Yang-lo
Lee, Jiyoung
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Kim, Seungbum
Yoon, Hyun-Jun
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Kim, Nahyun
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Song, Seunghwan
Park, Yongha
Bang, Jinbae
Hong, Sangki
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Min, Young-Sun
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Choi, Youngdon
Kim, Moosung
Kim, Hyunggon
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Ihm, Jeong-Don
Byeon, Dae-Seok
Lee, Jin-yub
Park, Ki-Tae
Kyung, Kye-hyun
2017 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE (ISSCC), 2017, : 202 - 202
[4] A 1Tb 4b/cell NAND Flash Memory with tPROG=2ms, tR=110μs and 1.2Gb/s High-Speed IO Rate
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Song, Youngsun
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Jang, Hwajun
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Kwak, Pansuk
Park, Joo-Yong
Choi, Youngdon
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2020 IEEE INTERNATIONAL SOLID- STATE CIRCUITS CONFERENCE (ISSCC), 2020, : 218 - +
[5] Process Improvements for 7th Generation 1Tb Quad-Level Cell 3D NAND Flash Memory in Mass Production
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[6] A 1Tb 4b/cell 5th-Generation 3D-NAND Flash Memory with 2ms tPROG, 110us tR and 1.2Gb/s/pin Interface
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[7] A 176-Stacked 512Gb 3b/Cell 3D-NAND Flash with 10.8Gb/mm2 Density with a Peripheral Circuit Under Cell Array Architecture
Park, Jae-Woo
Kim, Doogon
Ok, Sunghwa
Park, Jaebeom
Kwon, Taeheui
Lee, Hyunsoo
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Kang, Taikyu
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2021 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE (ISSCC), 2021, 64 : 422 - 423
[8] A 512Gb 3-bit/Cell 3D Flash Memory on 128-Wordline-Layer with 132MB/s Write Performance Featuring Circuit-Under-Array Technology
Siau, Chang
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Isobe, Katsuaki
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Verma, Kapil
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2019 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE (ISSCC), 2019, 62 : 218 - +
[9] A 512Gb 3b/Cell 7th-Generation 3D-NAND Flash Memory with 184MB/s Write Throughput and 2.0Gb/s Interface
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2021 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE (ISSCC), 2021, 64 : 426 - +
[10] A 512Gb 3-bit/Cell 3D 6th-Generation V-NAND Flash Memory with 82MB/s Write Throughput and 1.2Gb/s Interface
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2019 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE (ISSCC), 2019, 62 : 216 - +

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