Metal-insulator transition in epitaxial V1-xWxO2(0<x<0.33) thin films

被引：186
|
作者：
Shibuya, Keisuke [1 ]
Kawasaki, Masashi [1 ,2 ]
Tokura, Yoshinori [1 ,3 ,4 ]
机构：
[1] RIKEN, Adv Sci Inst, CMRG, Wako, Saitama 3510198, Japan
[2] Tohoku Univ, WPI Adv Inst Mat Res, Sendai, Miyagi 9808577, Japan
[3] Univ Tokyo, Dept Appl Phys, Tokyo 1138656, Japan
[4] Japan Sci & Technol Agcy JST, ERATO, Multiferro Project, Tokyo 1138656, Japan
来源：
APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 02期
关键词：
doping; epitaxial layers; ground states; metal-insulator transition; phase diagrams; phase separation; tungsten; vanadium compounds; MOTT-HUBBARD; VO2; TEMPERATURE; V1-XWXO2; PEIERLS; VIEW;
D O I：
10.1063/1.3291053
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have fabricated epitaxial V1-xWxO2(0 < x < 0.33) thin films on TiO2 (001) substrates. The metal-insulator transition temperature of VO2 is systematically reduced by W doping, and eventually a metallic ground state is realized at 0.08 < x < 0.09. Tiny resistivity upturn around 50 K observed for these films suggests an electronic phase separation between a majority metallic matrix and minority insulating puddles. With further increasing x above 0.095, another insulating phase appears while increasing the metal-insulator transition temperature. The elucidated phase diagram gives basic knowledge for devices based on Mott transition.
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页数：3
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