Atomistic computer simulation of fracture process at nanoscale

被引:0
|
作者
Wu, HA [1 ]
Ni, XG
Wang, XX
Haghighi, K
机构
[1] Univ Sci & Technol China, CAS Key Lab Mech Behav & Design Mat, Hefei 230026, Anhui, Peoples R China
[2] Purdue Univ, Dept Agr & Biol Engn, W Lafayette, IN 47907 USA
关键词
molecular dynamics simulation; fracture process; nano-scale; bifurcation;
D O I
10.4028/www.scientific.net/KEM.274-276.349
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Fracture of materials and structures is a classic problem in the discipline of solid mechanics. Traditional continuum mechanics has successfully solved many important problems and contributed much to engineering, while some problems still remain, such as microscopic fracture process, which requires us to go deep into the atomistic scale, nanomechanics. In this paper, our Work of atomistic computer simulation of fracture process at, nanoscale has been presented, as well as some selective work of others has been reviewed. To facilitate the numerical simulation at nanoscale, a new units system has been developed, including length, time, mass, and other derived physical qualities. Molecular dynamics simulations have been conducted to investigate the I-type brittle crack propagation and fracture process of single crystalline silver using two-dimensional triangular lattice model. The velocity Verlet algorithm is implemented to integrate the equations of motion. The Sutton-Chen potential is used to represent atomic interactions in our simulation. The behaviors of bifurcation and post-bifurcation have been demonstrated by atomic images. These characteristics. have been experimentally observed, however continuum fracture theories can not provide reasonable explanation to them. The traditional fracture mechanics predicts that the crack surface is mirror-like smooth, while a roughening transition is found in our atomistic simulation. Deeper insights into the fracture process can be obtained with multi-scale model to couple different energy, length and. time scales. The most important of all is that the couple model must be seamless. This problem has not been completely solved yet. Some promising models and methodologies have been presented. One is quasi-continuum method. The basic idea is that one can consider an inhomogeneously deformed body as a continuum, for which the kinematics can be described entirely in terms of displacement field, while atomistic analysis is employed to determine the total energy of the body. Another method of seamless coupling of quantum to statistical to continuum mechanics is using handshaking region between two different length scales. This method combines tight-binding (TB), molecular dynamics (MD) and finite element (FE) techniques. Its unifying theme is that a Hamiltonian is defined throughout the entire system. The third method is coarse-grained molecular dynamics (CGMD), where the FE/MD coupling is based on a derivation of the physical. scaling properties of the system.
引用
收藏
页码:349 / 354
页数:6
相关论文
共 50 条
  • [21] On the atomistic simulation of plastic deformation and fracture in crystals
    Shen, YL
    [J]. JOURNAL OF MATERIALS RESEARCH, 2004, 19 (04) : 973 - 976
  • [22] On the Atomistic Simulation of Plastic Deformation and Fracture in Crystals
    Y.-L. Shen
    [J]. Journal of Materials Research, 2004, 19 : 973 - 976
  • [23] Atomistic computer simulation studies of surfactant systems
    Bandyopadhyay, S
    Tarek, M
    Klein, ML
    [J]. NEW APPROACHES TO PROBLEMS IN LIQUID STATE THEORY: INHOMOGENEITIES AND PHASE SEPARATION IN SIMPLE, COMPLEX AND QUANTUM FLUIDS, 1999, 529 : 347 - 358
  • [24] Atomistic computer simulation of mechanical properties of composites
    Steinfath, M
    Bruns, W
    [J]. MACROMOLECULAR THEORY AND SIMULATIONS, 1997, 6 (04) : 749 - 760
  • [25] Atomistic Simulation of the Explosion Welding Process
    Saresoja, Ossi
    Kuronen, Antti
    Nordlund, Kai
    [J]. ADVANCED ENGINEERING MATERIALS, 2012, 14 (04) : 265 - 268
  • [26] Nanoindentation as a probe of nanoscale residual stresses: Atomistic simulation results
    Shenderova, O
    Mewkill, J
    Brenner, DW
    [J]. MOLECULAR SIMULATION, 2000, 25 (1-2) : 81 - +
  • [27] Surface roughness of gold substrates at the nanoscale: An atomistic simulation study
    Solhjoo, Soheil
    Vakis, Antonis I.
    [J]. TRIBOLOGY INTERNATIONAL, 2017, 115 : 165 - 178
  • [28] Atomistic simulation study of dislocations and grain boundaries in nanoscale semiconductors
    Masuda-Jindo, K
    Kikuchi, R
    Obata, S
    Menon, M
    [J]. POLYCRYSTALLINE SEMICONDUCTORS VII, PROCEEDINGS, 2003, 93 : 375 - 380
  • [29] Atomistic simulation study of grain boundaries and dislocations in nanoscale semiconductors
    Masuda-Jindo, K
    Menon, M
    Kikuchi, R
    [J]. POLYCRYSTALLINE SEMICONDUCTORS IV MATERIALS, TECHNOLOGIES AND LARGE AREA ELECTRONICS, 2001, 80-81 : 231 - 236
  • [30] The process modeling hierarchy: Connecting atomistic calculations to nanoscale behavior
    Dunham, ST
    [J]. SISPAD 2002: INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, 2002, : 213 - 216