The process modeling hierarchy: Connecting atomistic calculations to nanoscale behavior

被引：0
|
作者：
Dunham, ST [1 ]
机构：
[1] Univ Washington, Dept Elect Engn, Seattle, WA 98105 USA
来源：
SISPAD 2002: INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES | 2002年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work, we review efforts to make effective use of atomistic calculations for the advancement of VLSI process simulation.
引用
收藏
页码：213 / 216
页数：4
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