Compact Model of the Ballistic Subthreshold Current in Independent Double-Gate MOSFETs

被引：0
|
作者：
Munteanu, D. [1 ]
Moreau, M. [1 ]
Autran, J. L. [1 ]
机构：
[1] L2MP, CNRS, UMR 6137, 49 Rue Joliot Curie, F-13384 Marseille, France
来源：
NSTI NANOTECH 2008, VOL 3, TECHNICAL PROCEEDINGS: MICROSYSTEMS, PHOTONICS, SENSORS, FLUIDICS, MODELING, AND SIMULATION | 2008年
关键词：
Independently Driven Double-Gate MOSFET; ballistic transport; quantum effects; subthreshold current model;
D O I：
暂无
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
We present an analytical model for the subthreshold characteristic of ultra-thin Independent Double-Gate transistors working in the ballistic regime. This model takes into account short-channel effects, quantization effects and source-to-drain tunneling (WKB approximation) in the expression of the subthreshold drain current. Important device parameters, such as off-state current or subthreshold swing, can be easily evaluated through this full analytical approach. The model can be successfuly implemented in a TCAD circuit simulator for the simulation of IDG MOSFET based-circuits.
引用
收藏
页码：877 / +
页数：2
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