Characteristic analysis and suppression of SiC MOSFET-based crosstalk for inductive power transfer systems

Due to the lower gate threshold voltage of silicon carbide (SiC) MOSFET as compared with the silicon (Si) MOSFET, crosstalk significantly limits the high-speed switching performance of SiC MOSFET-based inductive power transfer (IPT) systems. The paper studies the crosstalk characteristic and proposes a suppression method of crosstalk aiming at IPT systems with phase-shifted control. Firstly, the generation mechanism of crosstalk is modeled and analyzed. Then, based on the analysis results, the special crosstalk problem for IPT systems with phase-shifted control is discussed, and a crosstalk suppression method is analyzed based on the optimization of compensation network parameters. Finally, a 1-kW IPT system prototype is built for experimental verification. The experimental results show that the optimization method can effectively suppress the crosstalk problem of the IPT system with phase-shifted control and does not significantly affect the output power and transmission efficiency.