MOSFET-based temperature sensor for standard BCD smart power technology

被引：1

作者：

Miribel-Català, P ^{[1
]}

Montané, E ^{[1
]}

Bota, SA ^{[1
]}

Puig-Vidal, M ^{[1
]}

Samitier, J ^{[1
]}

机构：

[1] Univ Barcelona, Dept Elect, E-08028 Barcelona, Spain

来源：

MICROELECTRONICS JOURNAL | 2001年 / 32卷 / 10-11期

关键词：

temperature sensors; smart power; CMOS compatible temperature sensor;

D O I：

10.1016/S0026-2692(01)00075-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Two on-chip temperature sensors for smart power BCD technology were compared. Temperature sensors based on bipolar transistors failed when DMOS power transistors were working under AC conditions because of substrate-coupled effects. An alternative MOSFET-based temperature sensor derived from a supply-independent CMOS bias source may overcome the problems associated with BCD technology. (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

页码：869 / 873

页数：5

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