Input silane concentration effect on the a-Si:H to μc-Si:H transition width

被引：2

作者：

Feltrin, A. ^{[1
]}

Strahm, B. ^{[1
,2
]}

Bugnon, G. ^{[1
]}

Sculati-Meillaud, F. ^{[1
]}

Ballif, C. ^{[1
]}

Howling, A. A. ^{[2
]}

Hollenstein, Ch. ^{[2
]}

机构：

[1] Ecole Polytech Fed Lausanne, Inst Microengn IMT, Photovolta & Thin Film Elect Lab, CH-2000 Neuchatel, Switzerland

[2] Ecole Polytech Fed Lausanne, Ctr Rech Phys Plasmas, CH-1015 Lausanne, Switzerland

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2010年 / 94卷 / 03期

关键词：

Silicon thin film; Silane-hydrogen discharge; Microstructure transition; MICROCRYSTALLINE SILICON;

D O I：

10.1016/j.solmat.2009.10.021

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In this work the microstructure transition width from amorphous to microcrystalline silicon is discussed. It is shown that the width of the transition depends on the input silane concentration level and indirectly on the silane depletion level. The higher the input silane concentration and depletion, the wider the transition. Experimental results are then compared to an analytical model and good agreement is obtained with a semi-empirical approach that takes into account the effect of the silane density in the plasma on the electron density. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：432 / 435

页数：4

共 50 条

[41] Luminescence of solar cells with a-Si:H/c-Si heterojunctions
D. M. Zhigunov
A. S. Il’in
P. A. Forsh
A. V. Bobyl’
V. N. Verbitskii
E. I. Terukov
P. K. Kashkarov
Technical Physics Letters, 2017, 43 : 496 - 498
[42] Computer simulation of a-Si:H/μc-Si:H diphasic silicon solar cells
Hao, HY
Kong, GL
Zeng, XB
Xu, Y
Diao, HW
Liao, XB
ACTA PHYSICA SINICA, 2005, 54 (07) : 3370 - 3374
[43] Novel a-Si:H/μc-Si:H tandem cell with lower optical loss
Janthong, Bancha
Hongsingthong, Aswin
Krajangsang, Taweewat
Zhang, Liping
Sichanugrist, Porponth
Konagai, Makoto
JOURNAL OF NON-CRYSTALLINE SOLIDS, 2012, 358 (17) : 2478 - 2481
[44] A-Si:H/μc-Si:H tandem solar cell by novel PECVD method
Niira, K
Senta, H
Nishimura, T
Hakuma, H
Komoda, M
Okui, H
Aramaki, K
Okada, Y
Tomita, K
Higuchi, H
PROCEEDINGS OF 3RD WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS A-C, 2003, : 1852 - 1855
[45] Chemical gas-phase reactions for a-Si:H and μc-Si:H deposition
Johann Wolfgang Goethe-Universitaet, Frankfurt, Frankfurt, Germany
Thin Solid Films, 1-2 (83-86):
[46] PECVD deposition of a-Si:H and μc-Si:H using a linear RE source
Van Aken, Bas B.
Devilee, Camile
Dorenkamper, Maarten
Geusebroek, Marco
Heijna, Maurits
Loffler, Jochen
Soppe, Wim J.
PHOTOVOLTAIC CELL AND MODULE TECHNOLOGIES, 2007, 6651
[47] Enhanced vertical photo-sensitivity in μc-Si:H/a-Si:H superlattices
Jun, KH
Lim, KS
JOURNAL OF NON-CRYSTALLINE SOLIDS, 2000, 261 (1-3) : 268 - 272
[48] Effect of ion bombardment on the a-Si:H based surface passivation of c-Si surfaces
Illiberi, A.
Kudlacek, P.
Smets, A. H. M.
Creatore, M.
van de Sanden, M. C. M.
APPLIED PHYSICS LETTERS, 2011, 98 (24)
[49] μc-Si:H/a-Si:H多层膜的制备及性质
郑家贵
冯良桓
蔡伟
黄天荃
蔡亚平
罗昭和
周心明
半导体学报, 1992, (01) : 55 - 61
[50] Critical Concentrations of Atmospheric Contaminants in a-Si:H and μc-Si:H Solar Cells
Merdzhanova, T.
Woerdenweber, J.
Kilper, T.
Stiebig, H.
Beyer, W.
Gordijn, A.
AMORPHOUS AND POLYCRYSTALLINE THIN-FILM SILICON SCIENCE AND TECHNOLOGY - 2010, 2010, 1245 : 51 - 56

← 1 2 3 4 5 →