Input silane concentration effect on the a-Si:H to μc-Si:H transition width

被引：2

作者：

Feltrin, A. ^{[1
]}

Strahm, B. ^{[1
,2
]}

Bugnon, G. ^{[1
]}

Sculati-Meillaud, F. ^{[1
]}

Ballif, C. ^{[1
]}

Howling, A. A. ^{[2
]}

Hollenstein, Ch. ^{[2
]}

机构：

[1] Ecole Polytech Fed Lausanne, Inst Microengn IMT, Photovolta & Thin Film Elect Lab, CH-2000 Neuchatel, Switzerland

[2] Ecole Polytech Fed Lausanne, Ctr Rech Phys Plasmas, CH-1015 Lausanne, Switzerland

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2010年 / 94卷 / 03期

关键词：

Silicon thin film; Silane-hydrogen discharge; Microstructure transition; MICROCRYSTALLINE SILICON;

D O I：

10.1016/j.solmat.2009.10.021

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In this work the microstructure transition width from amorphous to microcrystalline silicon is discussed. It is shown that the width of the transition depends on the input silane concentration level and indirectly on the silane depletion level. The higher the input silane concentration and depletion, the wider the transition. Experimental results are then compared to an analytical model and good agreement is obtained with a semi-empirical approach that takes into account the effect of the silane density in the plasma on the electron density. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：432 / 435

页数：4

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