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Domain switching contribution to the ferroelectric, fatigue and piezoelectric properties of lead-free Bi0.5(Na0.85K0.15)0.5TiO3 films
被引:33
|作者:
Chen, Jieyu
[1
,2
]
Tang, Zhehong
[1
,2
]
Tian, Ruonan
[1
,2
]
Bai, Yulong
[1
,2
]
Zhao, Shifeng
[1
,2
]
Zhang, Hao
[3
]
机构:
[1] Inner Mongolia Univ, Sch Phys Sci & Technol, Hohhot 010021, Peoples R China
[2] Inner Mongolia Univ, Inner Mongolia Key Lab Nanosci & Nanotechnol, Hohhot 010021, Peoples R China
[3] Univ Kentucky, Dept Phys & Astron, Lexington, KY 40506 USA
来源:
基金:
中国国家自然科学基金;
关键词:
THIN-FILMS;
DIELECTRIC-PROPERTIES;
CERAMICS;
SIZE;
COEFFICIENTS;
HYSTERESIS;
TIP;
D O I:
10.1039/c6ra04262g
中图分类号:
O6 [化学];
学科分类号:
0703 ;
摘要:
Lead-free Bi-0.5(Na0.85K0.15)(0.5)TiO3 films have been prepared via a solution-gelation technique. The microstructure, domain structure, ferroelectric, fatigue and piezoelectric properties were investigated systematically. This shows that the films have a single-phase perovskite structure and show outstanding ferroelectric, fatigue and piezoelectric properties at room temperature. The maximum piezoelectric coefficient value of the films reaches approximately 158.94 pm V-1, which is comparable to that of polycrystalline lead-based films. Thus good ferroelectric, fatigue and piezoelectric properties are attributed to the well-defined electrical domain structure and its switching for Bi-0.5(Na0.85K0.15)(0.5)TiO3 films. The present results suggest that Bi-0.5(Na0.85K0.15)(0.5)TiO3 films can be used as a candidate for lead-free films in piezoelectric micro-electro-mechanical systems.
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页码:33834 / 33842
页数:9
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