Evaluation of a negative 193 nm DUV resist for the 45 nm node: Lithography, degradation kinetics during etch and implant

被引：7
|
作者：
May, Michael J.
Derrough, Samir
Bazin, Arnaud
Mortini, Benedicte
Brochon, Cyril
Hadziioannou, Georges
机构：
[1] STMicroelect Crolles, F-38926 Crolles, France
[2] CEA, LETI, F-38054 Grenoble 9, France
[3] LIPHT, F-67087 Strasbourg 2, France
来源：
JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY | 2007年 / 20卷 / 03期
关键词：
negative 193 nm resist; oxide etch resistance; 193 nm interferometric lithography; thin film implant;
D O I：
10.2494/photopolymer.20.345
中图分类号：
O63 [高分子化学（高聚物）];
学科分类号：
070305 ; 080501 ; 081704 ;
摘要：
A 193 nm negative tone resist has been studied in order to estimate its possible use for the 45 nm node. Therefore, its etch resistance versus a 193 nm positive tone model resist has been analysed and its resolution limit determined by 193 nm interferometric immersion lithography. More recently, due to the chemical composition of the negative tone resist, it has been of interest to use it for thin film implant and some preliminary results will be given.
引用
收藏
页码：345 / 352
页数：8
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