Deprotection Kinetics of Alicyclic Polymer Resist Systems Designed for ArF (193 nm) Lithography

被引：0
|
作者：
Department of Chemistry, University of Texas, Austin, TX 78712, United States [1 ]
不详 [2 ]
不详 [3 ]
机构：
来源：
ACS Symposium Series | / 706卷
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：174 / 190
相关论文
共 50 条
  • [1] Deprotection kinetics of alicyclic polymer resist systems designed for ArF (193 nm) lithography
    ACS Symp Ser, (174-190):
  • [2] Alicyclic polymers designed for 193-nm wavelength resist applications
    不详
    MRS BULLETIN, 1999, 24 (01) : 5 - 5
  • [3] Deprotection kinetics of new 193 NM resists derived from alicyclic polymers.
    Okoroanyanwu, U
    Byers, J
    Shimokawa, T
    Webber, S
    Willson, CG
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1997, 214 : 320 - PMSE
  • [4] ArF excimer laser for 193 nm lithography
    Stamm, U
    Kleinschmidt, J
    Heist, P
    Bragin, I
    Patzel, R
    Basting, D
    OPTICAL MICROLITHOGRAPHY X, 1997, 3051 : 868 - 873
  • [5] ArF excimer laser for 193 nm lithography
    Stamm, U
    Patzel, R
    Kleinschmidt, J
    Vogler, K
    Zschocke, W
    Bragin, I
    Basting, D
    OPTICAL MICROLITHOGRAPHY XI, 1998, 3334 : 1010 - 1013
  • [6] 193 nm lithography and resist reflow for the BEOL
    DellaGuardia, R
    OPTICAL MICROLITHOGRAPHY XV, PTS 1 AND 2, 2002, 4691 : 853 - 860
  • [7] Alicyclic polymers for 193 nm resist applications: Synthesis and characterization
    Okoroanyanwu, U
    Shimokawa, T
    Byers, J
    Willson, CG
    CHEMISTRY OF MATERIALS, 1998, 10 (11) : 3319 - 3327
  • [8] Alicyclic polymers for 193 nm resist applications: Lithographic evaluation
    Okoroanyanwu, U
    Byers, J
    Shimokawa, T
    Willson, CG
    CHEMISTRY OF MATERIALS, 1998, 10 (11) : 3328 - 3333
  • [9] Structural design of new alicyclic acrylate polymer with and rostane moiety for 193nm resist
    Aoai, T
    Sato, K
    Kodama, K
    Kawabe, Y
    Nakao, H
    Yagihara, M
    MICROLITHOGRAPHY 1999: ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVI, PTS 1 AND 2, 1999, 3678 : 283 - 294
  • [10] Advanced ArF excimer laser for 193 nm lithography
    Lindner, R
    Stamm, U
    Patzel, R
    Basting, D
    MICROELECTRONIC ENGINEERING, 1998, 42 : 75 - 78
12345