Quantitative imaging of sheet resistance with a scanning near-field microwave microscope

被引：97
|
作者：
Steinhauer, DE [1 ]
Vlahacos, CP [1 ]
Dutta, SK [1 ]
Feenstra, BJ [1 ]
Wellstood, FC [1 ]
Anlage, SM [1 ]
机构：
[1] Univ Maryland, Ctr Superconduct Res, Dept Phys, College Pk, MD 20742 USA
来源：
APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 07期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1063/1.120918
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We describe quantitative imaging of the sheet resistance of metallic thin films by monitoring frequency shift and quality factor in a resonant scanning near-held microwave microscope. This technique allows fast acquisition of images at approximately 10 ms per pixel over a frequency range from 0.1 to 50 GHz. In its current configuration, the system can resolve changes in sheet resistance as small as 0.6 Ohm/square for 100 Ohm/square films. We demonstrate its use at 7.5 GHz by generating a quantitative sheet resistance image of a YBa2Cu3O7-delta thin film on a 5 cm diam sapphire wafer. (C) 1998 American Institute of Physics.
引用
收藏
页码：861 / 863
页数：3
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