Electron transport in copper phthalocyanines

被引:20
|
作者
Singh, Samarendra P. [1 ]
Sellinger, Alan [2 ]
Dodabalapur, Ananth [3 ]
机构
[1] Agcy Sci Technol & Res, IMRE, Singapore 117602, Singapore
[2] Stanford Univ, Geballe Lab Adv Mat, Dept Mat Sci & Engn, Stanford, CA 94305 USA
[3] Univ Texas Austin, Microelect Res Ctr, Dept Elect & Comp Engn, Austin, TX 78758 USA
关键词
charge exchange; electron traps; orbital calculations; organic semiconductors; semiconductor thin films; thin film transistors; THIN-FILM-TRANSISTORS; FIELD-EFFECT MOBILITY; ORGANIC SEMICONDUCTORS; AMBIPOLAR TRANSPORT; INTERFACE; STABILITY; HOLE;
D O I
10.1063/1.3284938
中图分类号
O59 [应用物理学];
学科分类号
摘要
Charge transport in copper phthalocyanine (CuPc), partially fluorinated CuPc (F(4)CuPc), and fluorinated CuPc (F(16)CuPc) based organic thin film transistors is studied using dual SiO(2)/polymethylmethacrylate gate dielectrics. We demonstrate the strong influence of air/moisture induced electron traps on electron transport when the lowest unoccupied molecular orbital is close to the vacuum irrespective of hydroxyl-free dielectrics used in the devices.
引用
收藏
页数:6
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