Electron transport in copper phthalocyanines

被引：20

作者：

Singh, Samarendra P. ^{[1
]}

Sellinger, Alan ^{[2
]}

Dodabalapur, Ananth ^{[3
]}

机构：

[1] Agcy Sci Technol & Res, IMRE, Singapore 117602, Singapore

[2] Stanford Univ, Geballe Lab Adv Mat, Dept Mat Sci & Engn, Stanford, CA 94305 USA

[3] Univ Texas Austin, Microelect Res Ctr, Dept Elect & Comp Engn, Austin, TX 78758 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2010年 / 107卷 / 04期

关键词：

charge exchange; electron traps; orbital calculations; organic semiconductors; semiconductor thin films; thin film transistors; THIN-FILM-TRANSISTORS; FIELD-EFFECT MOBILITY; ORGANIC SEMICONDUCTORS; AMBIPOLAR TRANSPORT; INTERFACE; STABILITY; HOLE;

D O I：

10.1063/1.3284938

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Charge transport in copper phthalocyanine (CuPc), partially fluorinated CuPc (F(4)CuPc), and fluorinated CuPc (F(16)CuPc) based organic thin film transistors is studied using dual SiO(2)/polymethylmethacrylate gate dielectrics. We demonstrate the strong influence of air/moisture induced electron traps on electron transport when the lowest unoccupied molecular orbital is close to the vacuum irrespective of hydroxyl-free dielectrics used in the devices.

引用

页数：6

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