Study of Optical Properties of CuInSe2 Thin Film

CuInSe2 is a direct band gap I-III-VI ternary solar semiconductor material. The CuInSe2 thin films for this study were prepared by co-evaporation technique from their elements on glass substrate maintained at temperatures between 200 degrees C and 500 degrees C in a conventional diffusion pump vacuum chamber at pressures of about 10(-5) torr at the Photovoltaic Laboratory of New Castle Upon 7 ne Polytechnique, U.K. Shimadzu T-TV spectrophotometer (model 1201) was used to investigate optical parameters of these films within 350-1100 nm range. Transmittance, reflectance and absorptance of these films were recorded. The absorption co-efficient and the band gap of these films were calculated from these data.