Studies on In-pWSe2 Schottky diode by current-voltage-temperature method

被引：8
|
作者：
Mathai, Achamma John [1 ]
Patel, K. D. [1 ]
Srivastava, R. [1 ]
机构：
[1] Sardar Patel Univ, Dept Phys, Vallabh Vidyanagar 388120, Gujarat, India
来源：
THIN SOLID FILMS | 2010年 / 518卷 / 15期
关键词：
In-pWSe(2); Schottky diodes; Current-Voltage measurements; Metal-semiconductor contacts; Tunneling; Thermionic emission; DEPENDENT BARRIER CHARACTERISTICS; I-V CHARACTERISTICS; ELECTRON-TRANSPORT; PHOTOVOLTAIC PROPERTIES; HEIGHT INHOMOGENEITY; CAPACITANCE-VOLTAGE; WSE2; CONTACTS; INTERFACE; NA;
D O I：
10.1016/j.tsf.2010.01.027
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Two types of In-pWSe(2) Schottky barrier diodes were fabricated, one on as grown (uncleaved) and the other on cleaved WSe2 surface. Current-voltage characteristics of these diodes have been analyzed over a wide span of temperature ranging from 140 K to 300 K on the basis of thermionic emission theory with Gaussian distribution model of barrier height. Below 200 K, a model has been considered where the total current is assumed to be the sum of thermionic emission, generation recombination and tunneling components. The observed deviation in barrier height, ideality factor and Richardson plot below 200 K are interpreted in terms of the contribution of these multiple charge transport mechanisms across the interface of the fabricated diodes. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：4417 / 4424
页数：8
相关论文
共 50 条
  • [41] Analysis of temperature dependent current-voltage characteristics of Sn/p-GaTe/In Schottky diode
    Duman, Songul
    Gurbulak, Bekir
    Sata, Mehmet
    OPTICAL MATERIALS, 2022, 125
  • [42] Electrical transport characteristics of ruthenium/n-InP Schottky diodes from current-voltage-temperature (I-V-T) measurements
    Janardhanam, V.
    Kumar, A. Ashok
    Reddy, V. Rajagopal
    Reddy, P. Narasimha
    OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2008, 2 (11): : 735 - 742
  • [43] Schottky Diode Detectors with Low Leakage Current at High Operating Voltage
    Sklyarchuk, V. M.
    Gnatyuk, V. A.
    Pylypko, V. G.
    Aoki, T.
    ENGINEERING FOR SUSTAINABLE FUTURE, 2020, 101 : 159 - 167
  • [44] A method to calculate the voltage-current characteristics of 4H SiC Schottky barrier diode
    Talwar, Rajneesh
    Chatterjee, Ashoke K.
    MAEJO INTERNATIONAL JOURNAL OF SCIENCE AND TECHNOLOGY, 2009, 3 (02) : 287 - 294
  • [45] Forward and reverse current-voltage-temperature characteristics of a typical BPW34 photodiode
    Bayhan, Habibe
    Ozden, Sadan
    SOLID-STATE ELECTRONICS, 2006, 50 (9-10) : 1563 - 1566
  • [46] Correlation of current-voltage-temperature analysis with deep level defects in epitaxial GaN films
    Reddy, Anurag G.
    Aggarwal, Neha
    Krishna, Shibin T. C.
    Singh, Manju
    Rakshit, Rajib
    Gupta, Govind
    APPLIED PHYSICS LETTERS, 2015, 106 (23)
  • [47] Temperature influence on current suppressing effect in SiC Schottky diode
    Kurel, R
    Rang, T
    MICRO MATERIALS, PROCEEDINGS, 2000, : 1208 - 1209
  • [48] Study of current-voltage-temperature (I-V-T) and capacitance-voltage-temperature (C-V-T) characteristics of molybdenum Schottky contacts on n-InP (100)
    Janardhanam, V.
    Kumar, A. Ashok
    Reddy, V. Rajagopal
    Reddy, P. Narasimha
    JOURNAL OF ALLOYS AND COMPOUNDS, 2009, 485 (1-2) : 467 - 472
  • [49] Temperature dependence of current-voltage characteristics of gold-strontium titanate thin film Schottky diode
    Gupta, R. K.
    Ghosh, K.
    Kahol, P. K.
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2010, 42 (05): : 1509 - 1512
  • [50] Analysis of current-voltage-temperature characteristics and T0 anomaly in Cr/n-GaAs Schottky diodes fabricated by magnetron sputtering technique
    Korkut, H.
    Yildirim, N.
    Turut, A.
    Dogan, H.
    MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2009, 157 (1-3): : 48 - 52
12345