Studies on In-pWSe2 Schottky diode by current-voltage-temperature method

被引：8

作者：

Mathai, Achamma John ^{[1
]}

Patel, K. D. ^{[1
]}

Srivastava, R. ^{[1
]}

机构：

[1] Sardar Patel Univ, Dept Phys, Vallabh Vidyanagar 388120, Gujarat, India

来源：

THIN SOLID FILMS | 2010年 / 518卷 / 15期

关键词：

In-pWSe(2); Schottky diodes; Current-Voltage measurements; Metal-semiconductor contacts; Tunneling; Thermionic emission; DEPENDENT BARRIER CHARACTERISTICS; I-V CHARACTERISTICS; ELECTRON-TRANSPORT; PHOTOVOLTAIC PROPERTIES; HEIGHT INHOMOGENEITY; CAPACITANCE-VOLTAGE; WSE2; CONTACTS; INTERFACE; NA;

D O I：

10.1016/j.tsf.2010.01.027

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Two types of In-pWSe(2) Schottky barrier diodes were fabricated, one on as grown (uncleaved) and the other on cleaved WSe2 surface. Current-voltage characteristics of these diodes have been analyzed over a wide span of temperature ranging from 140 K to 300 K on the basis of thermionic emission theory with Gaussian distribution model of barrier height. Below 200 K, a model has been considered where the total current is assumed to be the sum of thermionic emission, generation recombination and tunneling components. The observed deviation in barrier height, ideality factor and Richardson plot below 200 K are interpreted in terms of the contribution of these multiple charge transport mechanisms across the interface of the fabricated diodes. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：4417 / 4424

页数：8

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