Kinetics of dopant incorporation in GaAs grown by organometallic vapor-phase epitaxy

被引：0
|
作者：
Morrow, Richard A. [1 ]
机构：
[1] Univ Maine, Dept Phys & Astron, Orono, ME 04469 USA
来源：
JOURNAL OF CRYSTAL GROWTH | 2007年 / 300卷 / 02期
关键词：
diffusion; doping; growth models; organometallic vapor phase epitaxy; semiconducting gallium arsenide;
D O I：
10.1016/j.jcrysgro.2006.12.019
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
A diffusive capture reaction of dopant atoms by relevant host atoms, via the Rideal-Eley mechanism, in GaAs grown by organometallic vapor-phase epitaxy is shown to result in the dopant concentration in the crystal acquiring a dependence on p(Ga) (which is proportional to the growth rate) in agreement with data on S-As, Zn-Ga, and Si-Ga where p(Ga) is the partial pressure of trimethylgallium in the input gas stream. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：284 / 287
页数：4
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