Effect of Mg doping on enhancement of terahertz emission from InN with different lattice polarities

被引：22
|
作者：
Wang, X. Q. [1 ]
Zhao, G. Z. [2 ]
Zhang, Q. [1 ]
Ishitani, Y. [3 ]
Yoshikawa, A. [3 ]
Shen, B. [1 ]
机构：
[1] Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China
[2] Capital Normal Univ, Dept Phys, Beijing 100048, Peoples R China
[3] Chiba Univ, Grad Sch Elect & Elect Engn, Chiba 2638522, Japan
来源：
APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 06期
关键词：
buried layers; carrier density; carrier mobility; Dember effect; doping profiles; III-V semiconductors; indium compounds; magnesium; semiconductor doping; semiconductor epitaxial layers; terahertz wave generation; wide band gap semiconductors;
D O I：
10.1063/1.3303983
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Effect of Mg doping on terahertz (THz) emission from InN with different lattice polarities was studied. Strong enhancement of THz emission was observed from InN with appropriate Mg-concentrations (10(18) cm(-3)), which is independent of lattice polarity. The buried p-type layers show stronger THz emission than the n-type ones. The dominant mechanism for THz emission was found to be photo-Dember effect and the emission intensity was inversely proportional to the conductivity, which is beneficial to investigate THz emission from InN since the conductivity can be more accurately measured than the carrier concentration and mobility due to the electron accumulation on surface.
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页数：3
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