Intense terahertz emission from a-plane InN surface

被引：42
|
作者：
Ahn, H. [1 ,2 ]
Ku, Y. -P. [1 ,2 ]
Chuang, C. -H. [1 ,2 ]
Pan, C. -L. [1 ,2 ]
Lin, H. -W. [3 ]
Hong, Y. -L. [3 ]
Gwo, S. [3 ]
机构：
[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 30010, Taiwan
[2] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 30010, Taiwan
[3] Natl Tsing Hua Univ, Dept Phys, Hsinchu 30013, Taiwan
来源：
APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 10期
关键词：
D O I：
10.1063/1.2892655
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report a significant enhancement in terahertz emission from the indium nitride (InN) films grown along the a axis (a-plane InN), relative to the InN films grown along the c axis. The primary radiation mechanism of the a-plane InN film is found to be due to the acceleration of photoexcited carriers under the polarization-induced in-plane electric field perpendicular to the a axis, which effectively enhances the geometrical coupling of the radiation out of semiconductor. In addition, azimuthal angle dependence measurement shows that the p-polarized terahertz output consists of a large angularly independent component and a weak component with a distinctive fourfold rotation symmetry. (c) 2008 American Institute of Physics.
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页数：3
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